Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

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Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
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  5. MZPLL1T6HAJQ

Samsung Semiconductor - MZPLL1T6HAJQ

KEY Part #: K7360005

[21855дона саҳҳомӣ]

    Рақами Қисм:
    MZPLL1T6HAJQ
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    PM1725b PCIe Gen3 x8 HHHL 1.6 TB 5400 MB/s 2000 MB/s 750K IOPS 135K IOPS 3(5yrs) Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: MODULE, HBM Flarebolt, GDDR6, LPDDR5, SLC Nand, LPDDR4, GDDR5 and LPDDR4X ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor MZPLL1T6HAJQ electronic components. MZPLL1T6HAJQ can be shipped within 24 hours after order. If you have any demands for MZPLL1T6HAJQ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    MZPLL1T6HAJQ Аттрибутҳои маҳсулот

    Рақами Қисм : MZPLL1T6HAJQ
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : PM1725b PCIe Gen3 x8 HHHL 1.6 TB 5400 MB/s 2000 MB/s 750K IOPS 135K IOPS 3(5yrs) Mass Production
    Серияхо : DDR3
    намуна : PM1725b
    интерфейси : PCIe Gen3 x8
    F / F : HHHL
    имконият : 1.6 TB
    Seq. : 5400 MB/s
    Хонда шуд : 2000 MB/s
    Seq. : 750K IOPS
    Навиштани : 135K IOPS
    Шитофтанд. : 3(5yrs)
    Хонда шуд : Mass Production

    Охирин хабарҳо

    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Evolving Mobile Solutions: Samsung at MWC 2018
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Mission Peak Reference Server System for NGSFF SSD
    Mass Production of Fifth-Generation V-NAND has Started
    The future of NAND technology
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    5G and Memory - from Connected Thinking to Connected Living
    Bringing Artificial Intelligence to Devices Everywhere
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