[24259дона саҳҳомӣ]
- Рақами Қисм:
- K3UH5H50AM-JGCL
- Истеҳсолкунанда:
- Samsung Semiconductor
- Тавсифи муфассал:
- 32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.
- Manufacturer's standard lead time:
- Дар фурӯш
- Муҳлати нигоҳдорӣ:
- Як сол
- Chip Аз:
- Гонконг
- RoHS:
- Намуди пардохт:
-
- Тарзи интиқол:
- Категорияҳои оила:
- KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: SLC Nand, LPDDR4, GDDR6, LPDDR4X, MODULE, HBM Flarebolt, GDDR5 and DDR4 ...
- Афзалияти рақобатӣ:
- We specialize in Samsung Semiconductor K3UH5H50AM-JGCL electronic components. K3UH5H50AM-JGCL can be shipped within 24 hours after order. If you have any demands for K3UH5H50AM-JGCL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
K3UH5H50AM-JGCL Аттрибутҳои маҳсулот
Рақами Қисм :
K3UH5H50AM-JGCL
Истеҳсолкунанда :
Samsung Semiconductor
Тавсифи :
32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production
Серияхо :
DDR3
зичии :
32 Gb
ORG. :
x64
суръат :
4266 Mbps
Шиддат :
1.8 / 1.1 / 0.6 V
Temp. :
-25 ~ 85 °C
бастаи :
432FBGA
Статуси Маҳсулоти :
Mass Production
Охирин хабарҳо
Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
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DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
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M378A1K43BB2-CTD
Samsung Semiconductor
DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
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M378A1K43CB2-CPB
Samsung Semiconductor
DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
-
M378A1K43CB2-CRC
Samsung Semiconductor
DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
-
M378A1K43CB2-CTD
Samsung Semiconductor
DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
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