[23298дона саҳҳомӣ]
- Рақами Қисм:
- K4UHE3D4AA-GHCL
- Истеҳсолкунанда:
- Samsung Semiconductor
- Тавсифи муфассал:
- 24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production.
- Manufacturer's standard lead time:
- Дар фурӯш
- Муҳлати нигоҳдорӣ:
- Як сол
- Chip Аз:
- Гонконг
- RoHS:
- Намуди пардохт:
-
- Тарзи интиқол:
- Категорияҳои оила:
- KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: MODULE, LPDDR3, LPDDR5, HBM Flarebolt, GDDR5, LPDDR4X, LPDDR4 and DDR4 ...
- Афзалияти рақобатӣ:
- We specialize in Samsung Semiconductor K4UHE3D4AA-GHCL electronic components. K4UHE3D4AA-GHCL can be shipped within 24 hours after order. If you have any demands for K4UHE3D4AA-GHCL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
K4UHE3D4AA-GHCL Аттрибутҳои маҳсулот
Рақами Қисм :
K4UHE3D4AA-GHCL
Истеҳсолкунанда :
Samsung Semiconductor
Тавсифи :
24 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 105 °C 200FBGA Mass Production
Серияхо :
DDR3
зичии :
24 Gb
ORG. :
x32
суръат :
4266 Mbps
Шиддат :
1.8 / 1.1 / 0.6 V
Temp. :
-40 ~ 105 °C
бастаи :
200FBGA
Статуси Маҳсулоти :
Mass Production
Охирин хабарҳо
Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
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DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
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