[15796дона саҳҳомӣ]
- Рақами Қисм:
- K4F4E3S4HF-GHCJ
- Истеҳсолкунанда:
- Samsung Semiconductor
- Тавсифи муфассал:
- 4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production.
- Manufacturer's standard lead time:
- Дар фурӯш
- Муҳлати нигоҳдорӣ:
- Як сол
- Chip Аз:
- Гонконг
- RoHS:
- Намуди пардохт:
-
- Тарзи интиқол:
- Категорияҳои оила:
- KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: LPDDR5, LPDDR4X, HBM Flarebolt, HBM Aquabolt, DDR3, GDDR6, LPDDR4 and MODULE ...
- Афзалияти рақобатӣ:
- We specialize in Samsung Semiconductor K4F4E3S4HF-GHCJ electronic components. K4F4E3S4HF-GHCJ can be shipped within 24 hours after order. If you have any demands for K4F4E3S4HF-GHCJ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
K4F4E3S4HF-GHCJ Аттрибутҳои маҳсулот
Рақами Қисм :
K4F4E3S4HF-GHCJ
Истеҳсолкунанда :
Samsung Semiconductor
Тавсифи :
4 Gb x32 3733 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 105 °C 200FBGA Mass Production
Серияхо :
DDR3
зичии :
4 Gb
ORG. :
x32
суръат :
3733 Mbps
Шиддат :
1.8 / 1.1 / 1.1 V
Temp. :
-40 ~ 105 °C
бастаи :
200FBGA
Статуси Маҳсулоти :
Mass Production
Охирин хабарҳо
Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
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DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
Қисмҳои гарм
- K4F2E3S4HA-GFCL
- K4F2E3S4HA-GHCL
- K4F2E3S4HA-GUCL
- K4F2E3S4HM-MFCJ
- K4F2E3S4HM-MHCJ
- K4F4E3S4HF-GFCJ
- K4F4E3S4HF-GHCJ
- K4F4E3S4HF-GUCJ
- K4F6E3D4HB-MFCJ
- K4F6E3D4HB-MHCJ
- K4F6E3S4HM-GFCL
- K4F6E3S4HM-GHCL
- K4F6E3S4HM-GUCL
- K4F8E3S4HB-MFCJ
- K4F8E3S4HB-MHCJ
- K4F8E3S4HD-GFCL
- K4F8E3S4HD-GHCL
- K4F8E3S4HD-GUCL
- K4FBE3D4HM-GFCL
- K4FBE3D4HM-GHCL
- K4FBE3D4HM-GUCL
- K4FHE3D4HA-GFCL
- K4FHE3D4HA-GHCL
- K4FHE3D4HA-GUCL
- K4FHE3D4HM-MFCJ
- K4FHE3D4HM-MHCJ