Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

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Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. LPDDR4
  5. K4F6E3S4HM-GUCL

Samsung Semiconductor - K4F6E3S4HM-GUCL

KEY Part #: K7359768

[21588дона саҳҳомӣ]

    Рақами Қисм:
    K4F6E3S4HM-GUCL
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: DDR3, LPDDR4, LPDDR4X, GDDR5, HBM Aquabolt, DDR4, LPDDR5 and SLC Nand ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4F6E3S4HM-GUCL electronic components. K4F6E3S4HM-GUCL can be shipped within 24 hours after order. If you have any demands for K4F6E3S4HM-GUCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4F6E3S4HM-GUCL Аттрибутҳои маҳсулот

    Рақами Қисм : K4F6E3S4HM-GUCL
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 16 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production
    Серияхо : DDR3
    зичии : 16 Gb
    ORG. : x32
    суръат : 4266 Mbps
    Шиддат : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 125 °C
    бастаи : 200FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    Mass Production of Fifth-Generation V-NAND has Started
    How Will 5G Impact on Memory?
    Automotive Driven by Small Packages Under the Hood
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Unlocking the Power of Cloud Computing
    Evolving Mobile Solutions: Samsung at MWC 2018
    Inside the building blocks of the 5G future
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Bringing Artificial Intelligence to Devices Everywhere
    Autonomous Driving and the Quest for Safety
    Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    Қисмҳои гарм