Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

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Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. LPDDR4
  5. K4FHE3D4HA-GUCL

Samsung Semiconductor - K4FHE3D4HA-GUCL

KEY Part #: K7359779

[20257дона саҳҳомӣ]

    Рақами Қисм:
    K4FHE3D4HA-GUCL
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    24 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: DDR4, LPDDR5, GDDR6, LPDDR3, GDDR5, LPDDR4X, SLC Nand and DDR3 ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4FHE3D4HA-GUCL electronic components. K4FHE3D4HA-GUCL can be shipped within 24 hours after order. If you have any demands for K4FHE3D4HA-GUCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4FHE3D4HA-GUCL Аттрибутҳои маҳсулот

    Рақами Қисм : K4FHE3D4HA-GUCL
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 24 Gb x32 4266 Mbps 1.8 / 1.1 / 1.1 V -40 ~ 125 °C 200FBGA Mass Production
    Серияхо : DDR3
    зичии : 24 Gb
    ORG. : x32
    суръат : 4266 Mbps
    Шиддат : 1.8 / 1.1 / 1.1 V
    Temp. : -40 ~ 125 °C
    бастаи : 200FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    Inside the building blocks of the 5G future
    Evolving Mobile Solutions: Samsung at MWC 2018
    SSDs, DRAM and gaming: Unlocking a new level of performance
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Now Producing Industry’s Highest Density (3GB) LPDDR3 Mobile Memory for Smartphones
    Speed for the next generation of mobile devices
    Automotive Driven by Small Packages Under the Hood
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
    • M392A2K43BB0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A2K43BB0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 16 GB 2R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 18 EOL.

    • M392A4K40BM0-CPB

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2133 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M392A4K40BM0-CRC

      Samsung Semiconductor

      DDR4 VLP RDIMM 32 GB 2R x 4 2400 Mbps 1.2 V 288 (DDP4G x 4) x 18 EOL.

    • M378A1K43BB1-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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