| Тасвир | ҚИСМИ ҚИСМИ # / Истеҳсолкунанда | Тавсиф / PDF | Миқдор / RFQ |
|---|---|---|---|
 |
Samsung Semiconductor |
4 Gb 256M x 16 1866 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
24999дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production. |
21860дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
20248дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
21593дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1333 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
20056дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
21447дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
19892дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
21068дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
18472дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
15107дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
19193дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
23462дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
19442дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
25880дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
17661дона саҳҳомӣ |
Саҳифаҳои таснифшуда
success