| Тасвир | ҚИСМИ ҚИСМИ # / Истеҳсолкунанда | Тавсиф / PDF | Миқдор / RFQ |
|---|---|---|---|
 |
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
18176дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
14615дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1333 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
17624дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
17080дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
18490дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
27150дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
26869дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
25726дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
20829дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
26040дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
14296дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
18678дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
23312дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
20224дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
17141дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.35 V -40 ~ 105 °C 78FBGA Mass Production. |
24090дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1333 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
15623дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
18022дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
16063дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 256M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
25323дона саҳҳомӣ |
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