| Тасвир | ҚИСМИ ҚИСМИ # / Истеҳсолкунанда | Тавсиф / PDF | Миқдор / RFQ |
|---|---|---|---|
 |
Samsung Semiconductor |
2 Gb 256M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
16996дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 256M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
22539дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 256M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production. |
21400дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 256M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
25337дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 256M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
22178дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production. |
20824дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 128M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
23528дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 128M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
14868дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 128M x 16 2133 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production. |
15955дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 128M x 16 1866 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
21119дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 128M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production. |
17431дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 128M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
22867дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 128M x 16 1600 Mbps 1.35 V -40 ~ 95 °C 96FBGA Mass Production. |
21752дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 128M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
26091дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 128M x 16 1866 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
24906дона саҳҳомӣ |
|
Samsung Semiconductor |
2 Gb 128M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production. |
19090дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1333 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
19788дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1600 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
14489дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 1866 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
25276дона саҳҳомӣ |
|
Samsung Semiconductor |
4 Gb 512M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production. |
16363дона саҳҳомӣ |
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