[21068дона саҳҳомӣ]
- Рақами Қисм:
- K4B4G1646D-BYNB
- Истеҳсолкунанда:
- Samsung Semiconductor
- Тавсифи муфассал:
- 4 Gb 256M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
- Manufacturer's standard lead time:
- Дар фурӯш
- Муҳлати нигоҳдорӣ:
- Як сол
- Chip Аз:
- Гонконг
- RoHS:
- Намуди пардохт:
-
- Тарзи интиқол:
- Категорияҳои оила:
- KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: DDR3, LPDDR4, DDR4, LPDDR3, MODULE, LPDDR5, LPDDR4X and GDDR5 ...
- Афзалияти рақобатӣ:
- We specialize in Samsung Semiconductor K4B4G1646D-BYNB electronic components. K4B4G1646D-BYNB can be shipped within 24 hours after order. If you have any demands for K4B4G1646D-BYNB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
K4B4G1646D-BYNB Аттрибутҳои маҳсулот
Рақами Қисм :
K4B4G1646D-BYNB
Истеҳсолкунанда :
Samsung Semiconductor
Тавсифи :
4 Gb 256M x 16 2133 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
Серияхо :
DDR3
зичии :
4 Gb
ORG. :
256M x 16
суръат :
2133 Mbps
Шиддат :
1.35 V
Temp. :
0 ~ 85 °C
бастаи :
96FBGA
Статуси Маҳсулоти :
Mass Production
Охирин хабарҳо
Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
-
M378A1K43BB1-CPB
Samsung Semiconductor
DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
-
M378A1K43BB2-CRC
Samsung Semiconductor
DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
-
M378A1K43BB2-CTD
Samsung Semiconductor
DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.
-
M378A1K43CB2-CPB
Samsung Semiconductor
DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
-
M378A1K43CB2-CRC
Samsung Semiconductor
DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
-
M378A1K43CB2-CTD
Samsung Semiconductor
DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.
Қисмҳои гарм
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