Samsung Semiconductor - K4A4G165WE-BCWE

KEY Part #: K7359583

[14339дона саҳҳомӣ]

Рақами Қисм:: K4A4G165WE-BCWE

Истеҳсолкунанда:: Samsung Semiconductor

Тавсифи муфассал:: 4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

Manufacturer's standard lead time:: Дар фурӯш

Муҳлати нигоҳдорӣ:: Як сол

Chip Аз:: Гонконг

RoHS:

Намуди пардохт:

Тарзи интиқол:

Категорияҳои оила:: KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: LPDDR5, LPDDR4X, DDR4, HBM Aquabolt, LPDDR4, GDDR5, LPDDR3 and GDDR6 ...

Афзалияти рақобатӣ:: We specialize in Samsung Semiconductor K4A4G165WE-BCWE electronic components. K4A4G165WE-BCWE can be shipped within 24 hours after order. If you have any demands for K4A4G165WE-BCWE, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

K4A4G165WE-BCWE Аттрибутҳои маҳсулот

Рақами Қисм : K4A4G165WE-BCWE

Истеҳсолкунанда : Samsung Semiconductor

Тавсифи : 4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production

Серияхо : DDR4

зичии : 4 Gb

ORG. : 256M x 16

суръат : 3200 Mbps

Шиддат : 1.2 V

Temp. : 0 ~ 85 °C

бастаи : 96FBGA

Статуси Маҳсулоти : Mass Production

Охирин хабарҳо

High Bandwidth Memory is Catching on for Data-intensive Computing

Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day

Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)

Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards

Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP

SSDs, DRAM and gaming: Unlocking a new level of performance

Samsung Launches Industry’s First 12Gb LPDDR4 DRAM

Speed for the next generation of mobile devices

Samsung Z-SSD SZ985

Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing

[Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions

NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters

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4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.
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Samsung Semiconductor

4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

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