Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

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Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. DDR4
  5. K4A4G165WE-BCWE

Samsung Semiconductor - K4A4G165WE-BCWE

KEY Part #: K7359583

[14339дона саҳҳомӣ]

    Рақами Қисм:
    K4A4G165WE-BCWE
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: GDDR6, LPDDR4X, LPDDR5, LPDDR4, DDR3, DDR4, GDDR5 and MODULE ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4A4G165WE-BCWE electronic components. K4A4G165WE-BCWE can be shipped within 24 hours after order. If you have any demands for K4A4G165WE-BCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G165WE-BCWE Аттрибутҳои маҳсулот

    Рақами Қисм : K4A4G165WE-BCWE
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
    Серияхо : DDR4
    зичии : 4 Gb
    ORG. : 256M x 16
    суръат : 3200 Mbps
    Шиддат : 1.2 V
    Temp. : 0 ~ 85 °C
    бастаи : 96FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Speed for the next generation of mobile devices
    Samsung Z-SSD SZ985
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

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