Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

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Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. DDR4
  5. K4A4G085WE-BIRC

Samsung Semiconductor - K4A4G085WE-BIRC

KEY Part #: K7359578

[25355дона саҳҳомӣ]

    Рақами Қисм:
    K4A4G085WE-BIRC
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: LPDDR4X, DDR3, GDDR6, LPDDR3, LPDDR4, HBM Flarebolt, DDR4 and GDDR5 ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4A4G085WE-BIRC electronic components. K4A4G085WE-BIRC can be shipped within 24 hours after order. If you have any demands for K4A4G085WE-BIRC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G085WE-BIRC Аттрибутҳои маҳсулот

    Рақами Қисм : K4A4G085WE-BIRC
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA
    Серияхо : DDR4
    зичии : 4 Gb
    ORG. : 512M x 8
    суръат : 2400 Mbps
    Шиддат : 1.2 V
    Temp. : -40 ~ 95 °C
    бастаи : 78FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    5G and Memory - from Connected Thinking to Connected Living
    The future of NAND technology
    Mass Production of Fifth-Generation V-NAND has Started
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Speed for the next generation of mobile devices
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

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