Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

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Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. DDR4
  5. K4A8G165WB-BCWE

Samsung Semiconductor - K4A8G165WB-BCWE

KEY Part #: K7359609

[24756дона саҳҳомӣ]

    Рақами Қисм:
    K4A8G165WB-BCWE
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: LPDDR4X, MODULE, LPDDR5, HBM Flarebolt, GDDR5, DDR3, DDR4 and LPDDR3 ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4A8G165WB-BCWE electronic components. K4A8G165WB-BCWE can be shipped within 24 hours after order. If you have any demands for K4A8G165WB-BCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G165WB-BCWE Аттрибутҳои маҳсулот

    Рақами Қисм : K4A8G165WB-BCWE
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
    Серияхо : DDR4
    зичии : 8 Gb
    ORG. : 512M x 16
    суръат : 3200 Mbps
    Шиддат : 1.2 V
    Temp. : 0 ~ 85 °C
    бастаи : 96FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Inside the building blocks of the 5G future
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Unlocking the Power of Cloud Computing
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Memory Solutions for Automotive
    Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
    • KHA844801X-MC12

      Samsung Semiconductor

      4 Gb 1024 2.0 Gbps 32 ms MPGA Mass Production.

    • KHA844801X-MC13

      Samsung Semiconductor

      4 Gb 1024 2.4 Gbps 32 ms MPGA Mass Production.

    • KHA844801X-MN12

      Samsung Semiconductor

      4 Gb 1024 2.0 Gbps 32 ms MPGA Mass Production.

    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

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