Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

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Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. DDR4
  5. K4A8G085WC-BCWE

Samsung Semiconductor - K4A8G085WC-BCWE

KEY Part #: K7359603

[21766дона саҳҳомӣ]

    Рақами Қисм:
    K4A8G085WC-BCWE
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    8 Gb 1G x 8 3200 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: LPDDR3, GDDR5, LPDDR4X, GDDR6, SLC Nand, DDR4, HBM Aquabolt and LPDDR5 ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4A8G085WC-BCWE electronic components. K4A8G085WC-BCWE can be shipped within 24 hours after order. If you have any demands for K4A8G085WC-BCWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A8G085WC-BCWE Аттрибутҳои маҳсулот

    Рақами Қисм : K4A8G085WC-BCWE
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 8 Gb 1G x 8 3200 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production
    Серияхо : DDR4
    зичии : 8 Gb
    ORG. : 1G x 8
    суръат : 3200 Mbps
    Шиддат : 1.2 V
    Temp. : 0 ~ 85 °C
    бастаи : 78FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Automotive Driven by Small Packages Under the Hood
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Z-SSD SZ985
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Unlocking the Power of Cloud Computing
    Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

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