Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. DDR3
  5. K4B2G0846F-BMK0

Samsung Semiconductor - K4B2G0846F-BMK0

KEY Part #: K7359652

[22539дона саҳҳомӣ]

    Рақами Қисм:
    K4B2G0846F-BMK0
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    2 Gb 256M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: HBM Flarebolt, LPDDR5, GDDR5, LPDDR3, HBM Aquabolt, LPDDR4, LPDDR4X and DDR4 ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4B2G0846F-BMK0 electronic components. K4B2G0846F-BMK0 can be shipped within 24 hours after order. If you have any demands for K4B2G0846F-BMK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G0846F-BMK0 Аттрибутҳои маҳсулот

    Рақами Қисм : K4B2G0846F-BMK0
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 2 Gb 256M x 8 1600 Mbps 1.35 V -40 ~ 95 °C 78FBGA Mass Production
    Серияхо : DDR3
    зичии : 2 Gb
    ORG. : 256M x 8
    суръат : 1600 Mbps
    Шиддат : 1.35 V
    Temp. : -40 ~ 95 °C
    бастаи : 78FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    How Will 5G Impact on Memory?
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Inside the building blocks of the 5G future
    Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
    • K3UH5H50AM-AGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH5H50AM-EGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

      Samsung Semiconductor

      64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    Қисмҳои гарм