Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. DDR3
  5. K4B2G1646F-BYK0

Samsung Semiconductor - K4B2G1646F-BYK0

KEY Part #: K7359664

[26091дона саҳҳомӣ]

    Рақами Қисм:
    K4B2G1646F-BYK0
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    2 Gb 128M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: SLC Nand, LPDDR4X, HBM Flarebolt, DDR4, GDDR6, MODULE, LPDDR4 and LPDDR3 ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4B2G1646F-BYK0 electronic components. K4B2G1646F-BYK0 can be shipped within 24 hours after order. If you have any demands for K4B2G1646F-BYK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G1646F-BYK0 Аттрибутҳои маҳсулот

    Рақами Қисм : K4B2G1646F-BYK0
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 2 Gb 128M x 16 1600 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    Серияхо : DDR3
    зичии : 2 Gb
    ORG. : 128M x 16
    суръат : 1600 Mbps
    Шиддат : 1.35 V
    Temp. : 0 ~ 85 °C
    бастаи : 96FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Mission Peak Reference Server System for NGSFF SSD
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Unlocking the Power of Cloud Computing
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Autonomous Driving and the Quest for Safety
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    How Will 5G Impact on Memory?
    Bringing Artificial Intelligence to Devices Everywhere
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
    • K3UH5H50AM-AGCL

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      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH5H50AM-EGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

      Samsung Semiconductor

      64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

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