Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

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Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. DDR3
  5. K4B1G0846I-BCNB

Samsung Semiconductor - K4B1G0846I-BCNB

KEY Part #: K7359633

[24938дона саҳҳомӣ]

    Рақами Қисм:
    K4B1G0846I-BCNB
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    1 Gb 128M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: GDDR6, DDR3, LPDDR4, HBM Flarebolt, SLC Nand, GDDR5, MODULE and LPDDR4X ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4B1G0846I-BCNB electronic components. K4B1G0846I-BCNB can be shipped within 24 hours after order. If you have any demands for K4B1G0846I-BCNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B1G0846I-BCNB Аттрибутҳои маҳсулот

    Рақами Қисм : K4B1G0846I-BCNB
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 1 Gb 128M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production
    Серияхо : DDR3
    зичии : 1 Gb
    ORG. : 128M x 8
    суръат : 2133 Mbps
    Шиддат : 1.5 V
    Temp. : 0 ~ 85 °C
    бастаи : 78FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    5G and Memory - from Connected Thinking to Connected Living
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Mission Peak Reference Server System for NGSFF SSD
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
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