Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

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Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. DDR3
  5. K4B4G0846D-BYH9

Samsung Semiconductor - K4B4G0846D-BYH9

KEY Part #: K7359673

[17624дона саҳҳомӣ]

    Рақами Қисм:
    K4B4G0846D-BYH9
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    4 Gb 512M x 8 1333 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: GDDR6, LPDDR5, DDR3, LPDDR4X, SLC Nand, LPDDR4, MODULE and GDDR5 ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4B4G0846D-BYH9 electronic components. K4B4G0846D-BYH9 can be shipped within 24 hours after order. If you have any demands for K4B4G0846D-BYH9, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G0846D-BYH9 Аттрибутҳои маҳсулот

    Рақами Қисм : K4B4G0846D-BYH9
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 4 Gb 512M x 8 1333 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Серияхо : DDR3
    зичии : 4 Gb
    ORG. : 512M x 8
    суръат : 1333 Mbps
    Шиддат : 1.35 V
    Temp. : 0 ~ 85 °C
    бастаи : 78FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Mission Peak Reference Server System for NGSFF SSD
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Bringing Artificial Intelligence to Devices Everywhere
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