Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

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Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. DDR3
  5. K4B4G0846E-BYMA

Samsung Semiconductor - K4B4G0846E-BYMA

KEY Part #: K7359682

[18678дона саҳҳомӣ]

    Рақами Қисм:
    K4B4G0846E-BYMA
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: HBM Flarebolt, MODULE, DDR3, LPDDR3, DDR4, LPDDR5, LPDDR4 and GDDR6 ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4B4G0846E-BYMA electronic components. K4B4G0846E-BYMA can be shipped within 24 hours after order. If you have any demands for K4B4G0846E-BYMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G0846E-BYMA Аттрибутҳои маҳсулот

    Рақами Қисм : K4B4G0846E-BYMA
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 4 Gb 512M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Серияхо : DDR3
    зичии : 4 Gb
    ORG. : 512M x 8
    суръат : 1866 Mbps
    Шиддат : 1.35 V
    Temp. : 0 ~ 85 °C
    бастаи : 78FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Mass Production of Fifth-Generation V-NAND has Started
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    [Video] 5G memory solutions : 5G. All in the Memory.
    Automotive Driven by Small Packages Under the Hood
    Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
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    • K3UH6H60BM-EGCL

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    • K3UH7H70AM-AGCL

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