Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

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Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. DDR3
  5. K4B4G1646D-BCK0

Samsung Semiconductor - K4B4G1646D-BCK0

KEY Part #: K7359688

[18022дона саҳҳомӣ]

    Рақами Қисм:
    K4B4G1646D-BCK0
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    4 Gb 256M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: GDDR6, GDDR5, LPDDR5, SLC Nand, MODULE, DDR3, DDR4 and LPDDR4 ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4B4G1646D-BCK0 electronic components. K4B4G1646D-BCK0 can be shipped within 24 hours after order. If you have any demands for K4B4G1646D-BCK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646D-BCK0 Аттрибутҳои маҳсулот

    Рақами Қисм : K4B4G1646D-BCK0
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 4 Gb 256M x 16 1600 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production
    Серияхо : DDR3
    зичии : 4 Gb
    ORG. : 256M x 16
    суръат : 1600 Mbps
    Шиддат : 1.5 V
    Temp. : 0 ~ 85 °C
    бастаи : 96FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Automotive Driven by Small Packages Under the Hood
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Speed for the next generation of mobile devices
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    SSDs, DRAM and gaming: Unlocking a new level of performance
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    High Bandwidth Memory is Catching on for Data-intensive Computing
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      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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      Samsung Semiconductor

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