Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

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Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. DDR3
  5. K4B1G1646I-BCMA

Samsung Semiconductor - K4B1G1646I-BCMA

KEY Part #: K7359640

[19161дона саҳҳомӣ]

    Рақами Қисм:
    K4B1G1646I-BCMA
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    1 Gb 64M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: LPDDR4X, LPDDR4, HBM Aquabolt, DDR4, SLC Nand, HBM Flarebolt, GDDR6 and GDDR5 ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4B1G1646I-BCMA electronic components. K4B1G1646I-BCMA can be shipped within 24 hours after order. If you have any demands for K4B1G1646I-BCMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B1G1646I-BCMA Аттрибутҳои маҳсулот

    Рақами Қисм : K4B1G1646I-BCMA
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 1 Gb 64M x 16 1866 Mbps 1.5 V 0 ~ 85 °C 96FBGA Mass Production
    Серияхо : DDR3
    зичии : 1 Gb
    ORG. : 64M x 16
    суръат : 1866 Mbps
    Шиддат : 1.5 V
    Temp. : 0 ~ 85 °C
    бастаи : 96FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

    The future of NAND technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Memory Solutions for Automotive
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Automotive Driven by Small Packages Under the Hood
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    High Bandwidth Memory is Catching on for Data-intensive Computing
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Шояд шумо низ таваҷҷӯҳ зоҳир карда метавонед
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      Samsung Semiconductor

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    Қисмҳои гарм