Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

Агар макони шумо дар рӯйхат набошад, лутфан яке аз имконоти зеринро интихоб кунед:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Хона
  2. Маҳсулот
  3. DRAM
  4. DDR3
  5. K4B1G0846I-BYK0

Samsung Semiconductor - K4B1G0846I-BYK0

KEY Part #: K7359636

[17047дона саҳҳомӣ]

    Рақами Қисм:
    K4B1G0846I-BYK0
    Истеҳсолкунанда:
    Samsung Semiconductor
    Тавсифи муфассал:
    1 Gb 128M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Дар фурӯш
    Муҳлати нигоҳдорӣ:
    Як сол
    Chip Аз:
    Гонконг
    RoHS:
    Намуди пардохт:
    Тарзи интиқол:
    Категорияҳои оила:
    KEY Component Co., LTD як дистрибютор оид ба қисматҳои электронӣ мебошад, ки категорияҳои маҳсулотро пешниҳод мекунад, аз ҷумла: SLC Nand, LPDDR5, LPDDR4, LPDDR3, DDR4, GDDR6, HBM Aquabolt and DDR3 ...
    Афзалияти рақобатӣ:
    We specialize in Samsung Semiconductor K4B1G0846I-BYK0 electronic components. K4B1G0846I-BYK0 can be shipped within 24 hours after order. If you have any demands for K4B1G0846I-BYK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B1G0846I-BYK0 Аттрибутҳои маҳсулот

    Рақами Қисм : K4B1G0846I-BYK0
    Истеҳсолкунанда : Samsung Semiconductor
    Тавсифи : 1 Gb 128M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Серияхо : DDR3
    зичии : 1 Gb
    ORG. : 128M x 8
    суръат : 1600 Mbps
    Шиддат : 1.35 V
    Temp. : 0 ~ 85 °C
    бастаи : 78FBGA
    Статуси Маҳсулоти : Mass Production

    Охирин хабарҳо

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    Evolving Mobile Solutions: Samsung at MWC 2018
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    How Will 5G Impact on Memory?
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
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